Optical properties of GaN grown on porous silicon substrate
Identifieur interne : 000854 ( Main/Exploration ); précédent : 000853; suivant : 000855Optical properties of GaN grown on porous silicon substrate
Auteurs : T. Boufaden [Tunisie] ; A. Matoussi [Tunisie] ; S. Guermazi [Tunisie] ; S. Juillaguet [France] ; A. Toureille [France] ; Y. Mlik [Tunisie] ; B. El Jani [Tunisie]Source :
- physica status solidi (a) [ 0031-8965 ] ; 2004-02.
English descriptors
Abstract
A photoluminescence (PL) study of GaN grown on Si(100) substrate using porous silicon (PS) as an intermediate layer is reported. The samples were characterized using PL for the temperature range 5–300 K under various excitation powers from 5 to 50 mW. For growth temperatures below 800 °C, the room temperature PL shows a broad peak located around cubic GaN emission. This is in clear contradiction with previous scanning electron microscopy and X‐ray measurements. At low PL temperature, the observed lines located at 3.306 and 3.364 eV have a narrow full width at half maximum of about 6 and 10 meV, respectively. When the excitation power was varied, no peak shift was observed. These peaks were assigned as deeply localized excitons related to stacking faults near the PS/GaN interface. Quantum confinement (type I or II) due to the presence of nanometric cubic inclusions is another possible explanation for the low‐temperature PL. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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DOI: 10.1002/pssa.200306740
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The samples were characterized using PL for the temperature range 5–300 K under various excitation powers from 5 to 50 mW. For growth temperatures below 800 °C, the room temperature PL shows a broad peak located around cubic GaN emission. This is in clear contradiction with previous scanning electron microscopy and X‐ray measurements. At low PL temperature, the observed lines located at 3.306 and 3.364 eV have a narrow full width at half maximum of about 6 and 10 meV, respectively. When the excitation power was varied, no peak shift was observed. These peaks were assigned as deeply localized excitons related to stacking faults near the PS/GaN interface. Quantum confinement (type I or II) due to the presence of nanometric cubic inclusions is another possible explanation for the low‐temperature PL. (© 2004 WILEY‐VCH Verlag GmbH & Co. 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Mlik</name></country><country name="France"><region name="Occitanie (région administrative)"><name sortKey="Juillaguet, S" sort="Juillaguet, S" uniqKey="Juillaguet S" first="S." last="Juillaguet">S. Juillaguet</name></region><name sortKey="Toureille, A" sort="Toureille, A" uniqKey="Toureille A" first="A." last="Toureille">A. Toureille</name></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
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